Intern. sympos. "Nanostructure: Physics and Technology", St.Peterburg, Russia, June 24-28 , 1996
Общая информация
Включает:
Murzin V.N.
,
Mityagin Y.A.
,
Rasulova G.K.
,
Efimov Y.A.
Observation of enhanced current hysteresis
Tsvetkov V.A.
,
Sibeldin N.N.
,
Kazakov I.P.
,
Skorikov M.L.
,
Kozyrev D.A.
,
Tsehosh V.I.
Redistribution of the nonequilibrium charge carries in the quantum wells of the asymmetric doublewell structure in the parallel magnetic field
Kopaev Y.V.
,
Zasavitskii I.I.
,
Sibeldin N.N.
,
Kornyakov N.V.
,
Boltaev A.P.
,
Loiko N.N.
,
Rzaev M.M.
Switching effects and negative capacitance in Si/Ge multiple quantum wells
Copyright ©
БЕН РАН.
Наш адрес:
119991 ГСП-1 Москва В-71, Ленинский просп., 14
Телефон: 938-0309 (Справ. бюро)
Факс: (495)954-3320 (Лен.пр.,14), (495)938-1844 (Лен.пр.,32а)
Назад