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Поиск атрибутный
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Персона без имени
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- Kopaev Y.V. , Belyavsky V.I. , Kapaev V.V.
Coulomb coupling of like charges due to negative reduced effective mass.
6 Intern. Conf. Materials and Mechanisms of Superconductivity and High Temperature Superconductors, M2S-HTSC-VI, 20-25 February 2000, Houston, Texas, USA. Abstracts , с. P.26
- Kopaev Y.V. , Pavlov S.T. , Belyavsky V.I. , Kapaev V.V.
Exciton binding energy in asymmetrical quantum well systems.
1st Intern. Conf. on Physics of Low Dimensional Structures. PLDS-I. Abstracts. Chernogolovka, Dec. 7-10, 1993 , с. C.90
- Kopaev Y.V. , Kapaev V.V. , Kornyakov N.V.
Coulomb interaction and electronic phase transitions in quantum wells systems.
1-st Intern. Conf. on Physics of Low Dimensional Structures. PLDS-I Abstracts. Chernogovka, Dec. 7-10, 1993 , с. P.68
- Kopaev Y.V. , Gorbatsevich A.A. , Kapaev V.V. , Kremlev V.Y.
Wave function rearrangement quantum devices.
1-st Intern. Conf. on Physics of Low Dimensional Structures. PLDS-I Abstracts. Chernogovka, Dec. 7-10, 1993 , с. P.20
- Kopaev Y.V. , Pavlov S.T. , Belyavsky V.I. , Kapaev V.V. , Shevtsov S.V.
Exciton binding energy in asymmetrical quantum well systems.
Phys.Low-Dim.Struct. , N4/5 , с. P.19-24 , 01.1994
- Kopaev Y.V. , Gorbatsevich A.A. , Kapaev V.V. , Kremlev V.Y.
Wawe-function-rearrangement quantum devices.
Phys.Low-Dim.Struct. , N4/5 , с. P.57-62 , 01.1994
- Kopaev Y.V. , Kapaev V.V. , Kornyakov N.V.
Coulomb interaction and electronic phase transition in multiple quantum wells.
Phys.Low-Dim.Struct. , N1 , с. P.75-81 , 01.1994
- Kopaev Y.V. , Gorbatsevich A.A. , Kapaev V.V.
Magnetoelectric phenomena in nanoelectronics.
Ferroelectrics , Vol.161 , с. P.303-310 , 01.1994
- Kopaev Y.V. , Kapaev V.V. , Tsebro V.I. , Omel'yanovskii O.E. , Kadushkin V.I.
Giant transverse magnetoresistance in an asymmetric system.
Phys.Low-Dim.Struct. , N1/2 , с. P.25-32 , 01.1997
- Kopaev Y.V. , Kapaev V.V. , Aleshchenko Y.A. , Mel'nik N.N.
Geometrical parameter fluctuations and localized electronic states in quantum scale structures.
Semiconductor Sci. & Technol. , Vol.12,N12 , с. P.1565-1573 , 01.1997
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