Страницы:   1   2   3    Shotov A.P. Band-edge parameters of IV-VI small gap alloys (Abstract only). Physics of Narrow Gap Semiconductors. III Intern. conf. Proc. Warszawa, Sept. 12-15, 1977 / Ed.J.Rauluszkiewicz,M.Gorska,E.Kaczmarek , с. P.219-220   Shotov A.P. ,     Zasavitsky I.I. ,     Gureev D.M. ,     Matsonashvili B.N. On Auger recombination in Pb_1-xSn_xTe narrow-gap semiconductors. Abstracts of 8th Symp. of the IMEKO Technical Committee on Photon Detectors, 22-25 Aug. 1978, Praha , с. P.73-74   Shotov A.P. ,     Gorghunov B.M. ,     Zasavitsky I.I. ,     Koloshnikov V.G. ,     Kurisyn Y.A. ,     Vedeneeva G.V. High resolution spectroscopy with Pb_1-xSn_xSe cw and pulsed diode lasers. Applications to 14~NH_3 and 15~NH_3 ammonia isotops. 5-th Int.seminar on high resoluyion infrared spectroscopy, Liblice Near Prague, 18-22 sept. 1978 , с. P.43-44   Shotov A.P. ,     Kutcherenko I.V. ,     Vodopyanov L.K. ,     Mitjagin J.A. ,     Taktakishvily M.C. Energy band of Pb_1-xSn_xSe crystals (0 x 0.26) from measuremants of optical reflection and thermoelectric power in magnetic field (Зонная структура кристаллов Pb_1-xSn_xSe(0 x 0,26) из измерений оптического отражения и термоэдс в магнитном поле). Physics of semiconductors. 13 th Intern. conf. Proc. Rome, Aug.30 - Sept. 3, 1976 / Ed.F.G.Fumi , с. P.463-466   Shotov A.P. Tunable semiconductor infrared lasers. 4 th Conf. on Solid State Devices, Tokyo, 1972. J. of the Jap. Soc. of Appl. Phys., Vol.42, Suppl.,1973 , с. C.282-288   Shotov A.P. ,     Berozashvili Y.N. ,     Keldysh L.V. ,     Vul B.M. ,     Zavaritskaya E.I. ,     Bagaev V.S. About the energy spectrum of the heavily doped GaAs (Об энергетическом спектре сильно легированного арсенида галлия) / Ed.Dunod. Radiative recombination. Simpos. 7-th Intern. Conf. on Physics of Semiconductors, Paris, 1964 , с. P.149-154   Wul B.M. ,     Shotov A.P. Multiplication of electrons and holes in p-n junctions. Solid State Physics in Electronics and Telecommunications. Intern. conf. Proc. Brussel, June 2-7, 1958. Vol.1 Semiconductors. Pt. 1 / Ed. M.Desirant, J.L.Michiels , с. C.491-497   Wul B.M. ,     Shotov A.P. ,     Bagaev V.S. ,     Krokhin O.N. ,     Popov Y.M. ,     Kopylovsky B.D. ,     Khvoshev A.N. ,     Markin E.P. Semi-conductor Laser on P-N Junctions in GaAs. Quantum Electronics.Proc. 3-th Intern.Congr. / Ed.P.Grivet, N.Bloembergen , Vol.2 , с. P.1891-1897 , 01.1964   Shotov A.P. ,     Lashkarev G.V. ,     Shevchenko A.D. ,     Kusherenko I.V. Magnetic susceptibility of Pb_0.94Sn_0.06Se. Phys. status solidi B , Vol.63,N1 , с. K61-K64 , 01.1974   Shotov A.P. ,     Gorghunov B.M. ,     Zasavitsky I.I. ,     Koloshnikov V.G. ,     Kurisyn Y.A. ,     Vedeneeva G.V. CW and pulsed Pb_1-xSn_xSe diode laser spectroscopy of ~14NH_3 and ~15NH_3 molecules. Opt.Commun. , Vol.28,N1 , с. S.64-68 , 01.1979